THESIS
2019
xvi, 84 pages : color illustrations ; 30 cm
Abstract
Semiconductor nanolasers directly grown on silicon substrates are ideal light sources for
silicon-based photonic integrated circuits, benefiting from an ultra-small footprint and high
scalability. However, constructing a compact on-chip laser source that covers a wide emission
range is still challenging, especially for data-communication applications in the near-infrared
region. This thesis presents a comprehensive study of in-plane InP/InGaAs nanolasers with a
room temperature emission range fully covering the telecom band from 1300 nm to 1600 nm.
Both the transferred nanowire lasers and on-chip nanoridge lasers are investigated through
extensive theoretical studies and simulations. The good optical characteristics of the guiding
modes are presented and the TE
01 lasing mode is...[
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Semiconductor nanolasers directly grown on silicon substrates are ideal light sources for
silicon-based photonic integrated circuits, benefiting from an ultra-small footprint and high
scalability. However, constructing a compact on-chip laser source that covers a wide emission
range is still challenging, especially for data-communication applications in the near-infrared
region. This thesis presents a comprehensive study of in-plane InP/InGaAs nanolasers with a
room temperature emission range fully covering the telecom band from 1300 nm to 1600 nm.
Both the transferred nanowire lasers and on-chip nanoridge lasers are investigated through
extensive theoretical studies and simulations. The good optical characteristics of the guiding
modes are presented and the TE
01 lasing mode is identified. With highly ordered and low defect
nanoridges, strong lasing at a low threshold of around 40 μJ is experimentally demonstrated
under optical excitation. The wavelength selectable lasing phenomena are also studied in
simple Fabry-Pérot nanolaser cavities and the more sophisticated Distributed Bragg Reflector
integrated nanolasers. The mode and loss analyses reveal that the mechanisms for controlling
nanolaser emission wavelengths are mainly a result of the enhancement band-filling effect from
the low-dimensional quantum well material. The wavelength tunability schemes are also supported by the experimental realization of coarse lasing mode adjustments. This study paves
the way for future advancements in nanolaser technologies, such as complete integration with
other optical components in silicon devices and electrically pumped nanolasers.
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