THESIS
2019
x, 56 pages : illustrations (chiefly color) ; 30 cm
Abstract
Two-dimensional semiconducting transition metal dichalcogenides (TMDC)
have attracted many attentions for their interesting electronic and optoelectronic
properties. Among all synthetic methods, chemical vapor deposition (CVD) has been
the most promising technique to massively produce layered TMDC in industry. In this
thesis, CVD growth was conducted and modified to synthesize high-quality monolayer
molybdenum disulfide (MoS
2), one of the most popular materials among TMDC, and
corresponding field-effect transistors (FETs) were fabricated to examine its intrinsic
electrical properties. Raman and photoluminescence spectroscopy confirmed the high
quality of the as-grown monolayer MoS
2. Sulfur vacancy repairing technique was
developed with enhanced optical properties. All-dry trans...[
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Two-dimensional semiconducting transition metal dichalcogenides (TMDC)
have attracted many attentions for their interesting electronic and optoelectronic
properties. Among all synthetic methods, chemical vapor deposition (CVD) has been
the most promising technique to massively produce layered TMDC in industry. In this
thesis, CVD growth was conducted and modified to synthesize high-quality monolayer
molybdenum disulfide (MoS
2), one of the most popular materials among TMDC, and
corresponding field-effect transistors (FETs) were fabricated to examine its intrinsic
electrical properties. Raman and photoluminescence spectroscopy confirmed the high
quality of the as-grown monolayer MoS
2. Sulfur vacancy repairing technique was
developed with enhanced optical properties. All-dry transfer technique was introduced
to construct FETs, showing ultra-clean interface in high-resolution transmission
electron microscopy. The n-type channel of MoS
2 monolayer can reach a field-effect
mobility up to 250 cm
2V
-1s
-1 and on/off ratio up to 10
8 at room temperature. Phonon
scattering mechanism and magnetic response were investigated by using both Hall-bar
and Corbino-like electrode geometries.
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