THESIS
2020
xii, 101 pages : illustrations ; 30 cm
Abstract
An ultralow-k dielectric with structured cylindrical pores is proposed for advanced CMOS
interconnect technology. By using carbon nanotube (CNT) as a template, a porous dielectric
with vertically-aligned cylindrical pores is formed on the Si
3N
4 etch stop layer and successfully
integrated with the Cu damascene process. The fabricated cylindrical porous dielectric
possesses an anisotropic dielectric property with a large inter-layer dielectric constant of 1.97
and a small intra-layer dielectric constant of 1.75, and a high elastic modulus of 15.7 GPa is
maintained. The resulting dielectric constant is lower than the k-value of existing porous
dielectrics with the same high mechanical strength. At the same time, the proposed low-k
dielectric with cylindrical pores also has a highe...[
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An ultralow-k dielectric with structured cylindrical pores is proposed for advanced CMOS
interconnect technology. By using carbon nanotube (CNT) as a template, a porous dielectric
with vertically-aligned cylindrical pores is formed on the Si
3N
4 etch stop layer and successfully
integrated with the Cu damascene process. The fabricated cylindrical porous dielectric
possesses an anisotropic dielectric property with a large inter-layer dielectric constant of 1.97
and a small intra-layer dielectric constant of 1.75, and a high elastic modulus of 15.7 GPa is
maintained. The resulting dielectric constant is lower than the k-value of existing porous
dielectrics with the same high mechanical strength. At the same time, the proposed low-k
dielectric with cylindrical pores also has a higher thermal conductivity than the conventional
low-k dielectric with spherical pores, which can effectively mitigate the temperature rise of the
interconnect and improve the interconnect reliability. Due to the higher mechanical strength
and thermal conductivity, the k-value of the cylindrical porous dielectric has more potential to
be reduced compared to traditional porous dielectrics, which makes the proposed cylindrical
porous dielectric a promising candidate to extend the scaling of low-k dielectrics. By using the
proposed cylindrical porous dielectric as the interconnect dielectric, the interconnect delay and
crosstalk can be effectively reduced compared with conventional spherical porous dielectrics,
especially for the advanced interconnect technology of small pitches and large aspect ratios.
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