HKUST Electronic Theses Surface and gate-stack trap states in GaN lateral power HEMT devices : physical understandings and reliability enhancement
by Song Yang
THESIS
2021
Ph.D. Electronic and Computer Engineering
1 online resource (xxiii, 128 pages) : illustrations (some color)
Access
Not presently available for public access at author's request
Abstract
*CONFIDENTIAL*
Permanent URL for this record: https://lbezone.hkust.edu.hk/bib/991012936367003412
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