Chemical study on quarter-micro periodic structure fabrication on Si by polarized laser beam on polymer surface and reactive ion etching
by Cheng-Hao Lee
xi, 129 leaves : ill. ; 30 cm
A processing sequence for the fabrication of quarter micron periodic trench profiles on Si<100>wafers is described. By using polarized Nd:YAG laser irradiation on cured polyimide surfaces a periodic ripple structure is produced and a pattern transferred to a silicon substrate by reactive ion etching (RIE) without expansion of lateral dimensions. The profile has been optimized for a periodicity of 250 nm. Details of the fabrication process are described and the surface profile trench damage and plasma product deposition on the substrate are characterized by AFM, SEM, XPS respectively.
Permanent URL for this record: https://lbezone.hkust.edu.hk/bib/b447430
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