THESIS
1995
ix, 68, [30] leaves : ill. ; 30 cm
Abstract
With the Transmission Line Equivalent Circuit Model, the solution of the set of coupled non-linear partial differential equations governing the carrier transport in semiconductor is converted to a circuit analysis problem. A simulation program developed using the Equivalent Circuit Model approach by applying the symbolic manipulation tools to simplify the formulation of the circuit model equations is presented. The numerical analysis techniques are similar to those used in non-linear circuit analysis simulator. The program has been used to obtain the dc solution of an abrupt p
+/n junction diode which is compared with those results obtained from analytic expressions. Simulation of a device with Gaussian impurity profile was performed to show the versatility of this approach. The Equivale...[
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With the Transmission Line Equivalent Circuit Model, the solution of the set of coupled non-linear partial differential equations governing the carrier transport in semiconductor is converted to a circuit analysis problem. A simulation program developed using the Equivalent Circuit Model approach by applying the symbolic manipulation tools to simplify the formulation of the circuit model equations is presented. The numerical analysis techniques are similar to those used in non-linear circuit analysis simulator. The program has been used to obtain the dc solution of an abrupt p
+/n junction diode which is compared with those results obtained from analytic expressions. Simulation of a device with Gaussian impurity profile was performed to show the versatility of this approach. The Equivalent Circuit Model has been expanded to the simulation of photo illuminated devices by adding the photo excitation into the circuit model. The details of the modeling techniques has been described. The manipulation of the model parameters to obtain the device characteristics are also described. The approach was demonstrated by a p
+/n junction solar cell. The Model was subsequently applied to the analysis of a reverse biased p
+/n junction photodetector. A numerical consideration of reducing the computational time for the Model was also investigated.
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