Diazonaphthoquinone (DNOJ-incorporated photoactive compounds (PAC) have been used extensively in photolithography. Organic compounds containing one or more aromatic rings and hydroxyl groups were modified with DNQ substitutions. Inorganic compounds like polysiloxanes have never been studied as a backbone of PAC. However, they would give higher oxygen etch resistance and thermal stability, and more transparency in deep-UV region....[ Read more ]

Diazonaphthoquinone (DNOJ-incorporated photoactive compounds (PAC) have been used extensively in photolithography. Organic compounds containing one or more aromatic rings and hydroxyl groups were modified with DNQ substitutions. Inorganic compounds like polysiloxanes have never been studied as a backbone of PAC. However, they would give higher oxygen etch resistance and thermal stability, and more transparency in deep-UV region.

Diazonaphthoquinone-5-sulfonyl-incorporated low molecular weight polysiloxanes as a dissolution inhibitor in deep-uv resist system were studied. The photoresists were composed of a novolac or polyhydroxystyrene polymers mixed with modified polysiloxanes in various compositions. The short siloxane polymers were synthesized from diphenyl substituted dichlorosilane, and further substitution of the terminal hydroxyl groups with photosensitizer DNQ. The modified siloxane in the resist system, after exposed to VU light of 254 nm, render the higher solubility of the resist in base developer because of ltetene formation, giving rise to high resolution positive tone resist images.