THESIS
1998
xi, 56 leaves : ill. ; 30 cm
Abstract
The continued improvement in speed in CMOS devices has prompted many to look into the possibility of building CMOS RF front-end circuits. While several research results have been presented recently on using CMOS technologies for building LNAs, there has been a substantial mismatch between simulation and measurement results. The push to design low cost RF IC in CMOS technologies has called for more scalable model that includes all advanced technology features and Non-Quasi-Static (NQS) effects....[
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The continued improvement in speed in CMOS devices has prompted many to look into the possibility of building CMOS RF front-end circuits. While several research results have been presented recently on using CMOS technologies for building LNAs, there has been a substantial mismatch between simulation and measurement results. The push to design low cost RF IC in CMOS technologies has called for more scalable model that includes all advanced technology features and Non-Quasi-Static (NQS) effects.
The NQS effect of sub-micron MOS transistor was studied using MEDIC1 2-D device simulation program. The accuracy of the latest BSIM3V3 NQS model was verified by using the model extracted from the MEDIC1 simulated DC current and capacitance data. A 2.4GHz LNA design was used to illustrate the impact of NQS effect on LNA architecture and performance. Device characterisation was performed on the 0.35μm MOS transistors. Based on the knowledge of NQS effect, a 2.4GHz LNA operating at a 1.5 volt power supply was fabricated using 0.35μm CMOS technology.
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