THESIS
1999
1 v. (various pagings) : ill. ; 30 cm
Abstract
Two enhanced BSIM3 NQS models for the large signal transient and ac small signal simulation have been developed. One is physically derived with one more internal node while the other is empirically based without adding any internal node. They both give a unified equation for the transient gate and substrate current in the accumulation and inversion operation regions. These enhancements have been successfully implemented in the newly released BSIM3v3.2.2, and comparisons have been made with results obtained from the 2-D device simulator....[
Read more ]
Two enhanced BSIM3 NQS models for the large signal transient and ac small signal simulation have been developed. One is physically derived with one more internal node while the other is empirically based without adding any internal node. They both give a unified equation for the transient gate and substrate current in the accumulation and inversion operation regions. These enhancements have been successfully implemented in the newly released BSIM3v3.2.2, and comparisons have been made with results obtained from the 2-D device simulator.
Moreover, a new approach is adopted to study the channel charge partition of MOS transistors during Non-Quasi-Static (NQS) turn-on and turn-off. The strategy is to use a 2-D device simulator to separate the DC and charging current from the instantaneous source/drain current such that the transient channel charge partition ratio can be deduced from the charging current. Although it has been widely accepted that the channel charge partition ratio in the saturation region and linear region are 40/60 and 50/50 respectively, it is found that in the saturation the channel charge partition is closer to 0/100 and in the linear region, it varies from 0/100 to about 50/50.
Post a Comment