Nickel (Ni) Metal-Induced-Lateral-Crystallization (MILC) of amorphous Si is a promising technology for Silicon-On-Insulator (SOI) devices. In the first part of this thesis, effects of Ni structures and concentration on the poly-Si formation will be studied. SIMS analyses on the Ni profiles in different MILC regions will be presented. Thin-film-transistors (TFT) formed on the poly-Si crystallized by different Ni thicknesses and at different separations from Ni will be discussed. The effect of the growth of a sacrificial oxide to reduce surface Ni concentration will also be investigated. ₂...[ Read more ]

Nickel (Ni) Metal-Induced-Lateral-Crystallization (MILC) of amorphous Si is a promising technology for Silicon-On-Insulator (SOI) devices. In the first part of this thesis, effects of Ni structures and concentration on the poly-Si formation will be studied. SIMS analyses on the Ni profiles in different MILC regions will be presented. Thin-film-transistors (TFT) formed on the poly-Si crystallized by different Ni thicknesses and at different separations from Ni will be discussed. The effect of the growth of a sacrificial oxide to reduce surface Ni concentration will also be investigated.

In the second part of this thesis, effects of thickness and preparation method of amorphous Si on the poly-Si and TFT will be presented. In addition, effects of dopants (B, BF₂, P and As) will be covered. Finally, cross-sectional TEM analyses and attempts to form large poly-Si grains at designated MILC regions will be discussed.