Different Silicon-On-Insulator (SOI) technologies have been widely used in making the silicon substrate for the MOS devices. Metal-Induced-Lateral-Crystallization(MILC) method is a very promising process to provide a good quality silicon thin film. Apart from lower cost and easy manufacturing process, it can produce variable silicon thickness in a very convenient way and construct multi-layer structure....[ Read more ]

Different Silicon-On-Insulator (SOI) technologies have been widely used in making the silicon substrate for the MOS devices. Metal-Induced-Lateral-Crystallization(MILC) method is a very promising process to provide a good quality silicon thin film. Apart from lower cost and easy manufacturing process, it can produce variable silicon thickness in a very convenient way and construct multi-layer structure.

In this thesis, different factors and parameters governing the process of lateral crystallization of amorphous silicon by nickel will be discussed. The development of grains in the MILC process will be presented. The principle leading to the shape of grain will also be covered. The temperature and time effects will be presented in detail. The post-MILC treatment of high temperature which is a crucial factor affecting the final film quality will be discussed. Initial geometry of nickel will be shown to generate different shapes of grains. The mechanism behind the crystallization process will then be discussed. Mutual acceleration phenomenon in the MILC regions which have a neighbouring MILC process will be examined and the application of this condition will be suggested.

Finally, the application of pulsed rapid thermal annealing on MILC silicon film will be discussed. This research has been searching the optimum condition and some parameters have been investigated and optimized and give insight into the theory of crystallization by nickel.