Optical Properties of GaN_xAs_1-x/GaAs quantum well is investigated by temperature, excitation power and hydrostatic pressure dependence photoluminescence. We demonstrated that there are two recombination mechanisms, the peak at 1.3eV is originated from an intrinsic transition with the bandtail corresponding to the recombination of photogenerated carriers trapped by localized states, and the peak at ~1eV corresponding to the recombination of the carriers at deep levels in GaAs. The N composition dependence band gap energy is consistent with the previous theoretical calculation. _{0.015 0.085}...[ Read more ]

Optical Properties of GaN_xAs_1-x/GaAs quantum well is investigated by temperature, excitation power and hydrostatic pressure dependence photoluminescence. We demonstrated that there are two recombination mechanisms, the peak at 1.3eV is originated from an intrinsic transition with the bandtail corresponding to the recombination of photogenerated carriers trapped by localized states, and the peak at ~1eV corresponding to the recombination of the carriers at deep levels in GaAs. The N composition dependence band gap energy is consistent with the previous theoretical calculation.

Until this work was completed no detailed studies of the low-temperature emission of GaNAs/GaAs under hydrostatic pressure were available. The GaN_0.015As_0.085/GaAs QW has been studied as a function of hydrostatic pressure (0-9GPa) at 11K. We found the impurity nature of GaNAs energy state; it gives a non-linear pressure coefficient. It is different from GaAs which give a linear pressure coefficient (108meV/GPa). We tried to explain the results with anticrossing interaction of E_M and E_N. Based on these experimental results, a better understanding of the electronic properties of GaNAs alloy is achieved, but no conclusion can be made yet.