THESIS
2003
xiv, 98 leaves : ill. ; 30 cm
Abstract
The rapid evolution of silicon MOSFET technology is fueled by a never-ending demand for better performance at a reduced cost. The CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. The great interest in RF MOSFET comes with the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. Advances in the fabrication process always pose new challenges to circuit designers. In order to be able to take full advantage of the new technology, designers need to update their CAD (Computer Aided Design) tools with precise descriptions of the new devices. T...[
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The rapid evolution of silicon MOSFET technology is fueled by a never-ending demand for better performance at a reduced cost. The CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. The great interest in RF MOSFET comes with the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. Advances in the fabrication process always pose new challenges to circuit designers. In order to be able to take full advantage of the new technology, designers need to update their CAD (Computer Aided Design) tools with precise descriptions of the new devices. The model parameters are derived from measurements and characterization of the devices. However, inevitable capacitive and inductive parasitic with values close to DUT degrades the device performance and the accuracy of measurement results in RF range. In addition, transistor behaves totally different between small-signal and large-signal applications. Thus, device characterization and modeling at high frequency range become challenging tasks to accurately describe the device behaviors.
A full range of characterizations for RF power transistors namely DC, small-signal and large-signal RF, linearity and noise characterization has been developed to completely characterize the device linear, non-linear and noise behaviors. In particular, a load-pull system has been set up for large-signal RF characterization, which is an effective but complicated approach to characterize the device non-linear behavior under large-signal operations. In order to obtain accurate RF measurement results, de-embedding techniques are investigated to remove the parasitic. Equivalent circuits representing both intrinsic and extrinsic components in a MOSFET are analyzed to obtain physics-based RF models.
Complete characterizations and model parameter extractions are tried on two real devices: Silicon-On-Sapphire (SOS) MOSFET and Step-Gate-Oxide (SGO) MOSFET. Current gain cutoff frequency (f
T), maximum oscillation frequency (f
max), maximum output power, power-added-efficiency and other parameters were obtained from these devices.
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