A novel approach to improving light emission from lattice-matched GaSb/AlSb/InAs-based quantum structures is proposed and realized experimentally. The experimental results show a promising future of the structure in the mid-infrared light emitting devices. _{0.35 0.65 0.35 0.65 0.1 0.9 0.35 0.65 0.35 0.65 0.35 0.65 0.35 0.65 0.1 0.9}...[ Read more ]

A novel approach to improving light emission from lattice-matched GaSb/AlSb/InAs-based quantum structures is proposed and realized experimentally. The experimental results show a promising future of the structure in the mid-infrared light emitting devices.

All the GaSb/AlSb/InAs-based quantum structures were grown with Molecular Beam Epitaxy (MBE) technology. The quantum structure of In_0.35Ga_0.65Sb/In_0.35Ga_0.65As_0.1Sb_0.9/In_0.35Ga_0.65Sb/Al_0.35Ga_0.65Sb were designed and fabricated. Different growth temperature of substrate and sources were empolyed. Different thickness of In_0.35Ga_0.65Sb and In_0.35Ga_0.65As_0.1Sb_0.9 layers were fabricated on the GaSb substrates. Then Photoluminescence properties were investigated with optical pumping powers from 18 to 478 mW and from temperatures 11K to 100K. The experiment results show that the optical transition probability can be enhanced through tuning the overlap between the electron and hole wavefunctions. The preliminary results from these quantum structures are very encouraging for mid-infrared light emitting devices.