SIC thin films were grown on Si(100) and Si(111) substrates by hot filament chemical vapor deposition (HFCVD). Microstructures of the films were examined by x-ray photoelectron spectroscopy, x-ray powder diffraction, transmission electron microscopy and transmission electron diffraction. The results show that it is possible to grow single crystal 3C-Sic thin film on Si(100) substrate by HFCVD. The SiC/Si interface was smooth and free of hollow voids....[ Read more ]

SIC thin films were grown on Si(100) and Si(111) substrates by hot filament chemical vapor deposition (HFCVD). Microstructures of the films were examined by x-ray photoelectron spectroscopy, x-ray powder diffraction, transmission electron microscopy and transmission electron diffraction. The results show that it is possible to grow single crystal 3C-Sic thin film on Si(100) substrate by HFCVD. The SiC/Si interface was smooth and free of hollow voids.

Intense photoluminescence was observed at room temperature from both as-grown Sic films on Si(100) and anodized SIC samples prepared by the electrochemical anodization of those as-grown SIC films in a HF-ethanol solution. A new broad luminescence band with peak energy centered around 2.1 eV to 2.2eV was induced in anodized Sic samples under prolonged UV-irradiation. We also observed that changes of anodisation conditions only result in a slight change of the shape of this irradiation-induced emission band. The irradiation-induced emission was stable at room temperature. In addition, luminescence intensities of PL emission from as-grown SIC thin films and the irradiation-induced emission from anodized SIC were oreatly enhanced by UV-irradiation. t No such effect was observed in PL emission from porous silicon. These results were explained by an effect similar to the so-called Steabler- Wronski effect in hydrogenated amorphous silicon.