Recent advancements in artificial intelligence, automotive electronics, industrial control, and the Internet of Things have generated vast amounts of data. To handle these effectively, storage units must be fast, energy-efficient, and capable of seamlessly integrating computing and storage for data-intensive applications. Magnetoresistive Random Access Memory (MRAM), with its high access speed, scalability, and non-volatility, has emerged as a promising candidate for next-generation memory solutions. This thesis focuses on the influence of temperature on innovative spintronic devices, as temperature plays a critical role in determining energy efficiency, magnetization, and magnetization dynamics. We reveal the strongly temperature-dependent magnetic properties in various magnetic hetero...[ Read more ]

Recent advancements in artificial intelligence, automotive electronics, industrial control, and the Internet of Things have generated vast amounts of data. To handle these effectively, storage units must be fast, energy-efficient, and capable of seamlessly integrating computing and storage for data-intensive applications. Magnetoresistive Random Access Memory (MRAM), with its high access speed, scalability, and non-volatility, has emerged as a promising candidate for next-generation memory solutions. This thesis focuses on the influence of temperature on innovative spintronic devices, as temperature plays a critical role in determining energy efficiency, magnetization, and magnetization dynamics. We reveal the strongly temperature-dependent magnetic properties in various magnetic heterostructures. Our research explores three primary systems: sputtered amorphous semimetals, ferrimagnet insulators, and ferrimagnetic rare-earth and transition-metal alloy trilayers, highlighting the impact of temperature on spin-orbit torque (SOT), field-induced switching, current-induced switching and interlayer Dzyaloshinskii-Moriya interaction (DMI).

To enhance SOT efficiency, we utilize innovative sputtered amorphous semimetals as a source for spin generation and investigate the potential role of topological surface states and the strongly temperature-dependent SOT. With this strongly temperature-dependent SOT, we achieve current-induced switching over a broad temperature range, from 12 K to 292 K. Given the small magnetization and high-speed dynamics of ferrimagnets, we explore the physical mechanisms underpinning a ferrimagnetic rare-earth and transition-metal alloy trilayer system. We observe temperature-sensitive field-induced switching, attributing to the strongly temperature-dependent interlayer DMI. Through first-principles calculations, we identify this phenomenon as a result of temperature-dependent spin-orbit coupling strength of Tb. Furthermore, due to the low Gilbert damping and long spin transmission length of ferrimagnetic insulators, we investigate the switching behavior of ferrimagnetic insulators. In studying ferrimagnet insulators, we use terbium iron garnet to demonstrate heat-assisted SOT switching, which exhibits consistent switching polarity across a wide temperature range due to significant thermal effects during writing pulses.